CMDSH2-3 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA

Schottky Barrier Diode
FEATURES
z High current
z Extremely fast switching speed
z Ultra-small surface mount package
Pb
Lead-free
Production specification
CMDSH2-3
APPLICATIONS
z Schottky barrier detector and switching diodes
ORDERING INFORMATION
Type No.
Marking
CMDSH2-3
S2•
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC reverse voltage
V_R
30
V
Forward continuous Current
I_F
200
mA
Forward Surge Current
@tp=1ms _IFSM
1
A
Power Dissipation
P_d
250
mW
Thermal resistance,junction to ambient air R_θjA
500
℃/W
Junction temperature
Storage temperature range
T_j
150
℃
T_stg
-65 to+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Symbol
V_(BR)R
Forward voltage
V_F
Reverse leakage current
I_R
Reverse recovery time
t_rr
Total capacitance
C_T
Conditions
I_R=100μA
I_F=2mA
I_F=15mA
I_F=100mA
I_F=200mA
V_R=30V
I_F=10mA,I_R=1.0mA
V_R=10V,f=1.0MHz
Min.
30
Typ.
0.26
0.32
0.42
0.49
0.4
15
Max. Unit
V
V
V
V
0.55 V
50
μA
5.0
ns
pF
B046
Rev.A
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