BYV27-50 Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED FAST EFFICIENT RECTIFIER

BL ^{GALAXY ELECTRICAL}
SUPER FAST RECTIFIER
BYV27 - 50(Z) - - - BYV27 - 600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and sim ilar solvents
MECHANICAL DATA
Case: JEDEC DO-15L,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 gram s
Mounting position: Any
DO - 15L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unless otherwise specified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27
-50 -100
BYV27
-150
BYV27
-200
BYV27 BYV27 BYV27
-300 -400 -600
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM 50
V_RMS 35
V_DC
50
I_F(AV)
10ms single half -sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
100 150 200 300 400 600
V
70
105 140 210 280 420
V
100 150 200 300 400 600
V
2.0
1.9
1.6
A
50.0
40.0
A
0.98
25
5.0
100.0
62
100
- 55 ----- + 150
- 55 ----- + 150
1.05
50
1.25
V
A
ns
pF
/W
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Document Number 0264014
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