BST50 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN Darlington transistors

Production specification
NPN Darlington Transistor
FEATURES
z High current(max.0.5A).
z High voltage(max.80v).
Pb
Lead-free
z Integrated diode and resistor.
z PNP complements:BST60,BST61 AND BST62.
APPLICATIONS
z Industrial switching applications such as:
-Print hammer
-Solenoid
-Relay and lamp driving
ORDERING INFORMATION
Type No.
Marking
BST50
AS1
BST51
AS2
BST52
AS3
BST50;BST51;BST52
SOT-89
Package Code
SOT-89
SOT-89
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
BST50
BST51
BST52
BST50
BST51
BST52
Value
60
80
90
45
60
80
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -DC
1
I_CM
Peak Collector Current
2
I_B
Base Current
100
P_tot
Total powerDissipation
1.3
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
A
A
mA
W
℃
E073
Rev.A
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