BCW67 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – PNP Silicon AF Transistors

Production specification
PNP General Purpose Amplifier
FEATURES
z For general AF applications.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Complementary types:BCW65,BCW66(NPN).
BCW67/BCW68
APPLICATIONS
z This device is designed for general purpose amplifier
and switching applications.
ORDERING INFORMATION
Type No.
Marking
BCW67A/B/C
BCW68F/G/H
DA/DB/DC
DF/DG/DH
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
BCW67
BCW68
V_CBO
Collector-Base Voltage
-45
-60
V_CEO
Collector-Emitter Voltage
-32
-45
V_EBO
Emitter-Base Voltage
--5
-5
I_CM
Peak collector current
-1
I_C
Collector Current -Continuous
-800
P_D
Total Device Dissipation
330
R_thJS
Junction thermal resistance
215
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Unit
V
V
V
A
mA
mW
℃/W
℃
C161
Rev.A
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