BCW65 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistors (For general AF applications High current gain)

BL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z For general AF appilications.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Complementary types:BCW67,BCW68(PNP)
APPLICATIONS
z General purpose medium power amplifier.
z Switching appilication.
Production specification
BCW65/66
SOT-23
ORDERING INFORMATION
Type No.
Marking
BCW65A/B/C
BCW66F/G/H
EA/EB/EC
EA/EB/EC
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
BCW65 _{BCW66 Unit}
V_CBO
Collector-Base Voltage
32
45
V
V_CEO
Collector-Emitter Voltage
60
75
V
V_EBO
I_C
Emitter-Base Voltage
5
5
V
Collector Current -Continuous
800
mA
P_C
Collector Dissipation
330
mW
T_j,T_stg
Junction and Storage Temperature _-65to+150
℃
Document number: BL/SSSTC106
Rev.A
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