BC846W_14 Datasheet, PDF (1/5 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
FEATURES
z
Pb
For AF input stages and driver applications.
z High current gain.
Lead-free
z Low collector-emitter saturation voltage.
z Low noise between 30 Hz and 15 kHz.
z Complementary types:BC856W,BC857W,BC858W.
APPLICATIONS
z General purpose switching and amplification application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
BC846W
BC847W
BC848W
1A/1B
1E/1F/1G
1J/1K/1L
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
BC846W
80
BC847W 50
BC848W 30
BC846W
65
BC847W
45
BC848W
30
V_EBO
Emitter-Base Voltage
BC846W,BC847W 6
BC848W
5
I_C
Collector Current -Continuous
100
I_CM
Peak Collector current
200
I_BM
Peak Base current
200
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mA
mA
mW
℃
F045
Rev.A
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