BC846W Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistors

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
FEATURES
z Low Current.
z Low voltage.
z Power dissipation.(P_C=200mW)
Pb
Lead-free
APPLICATIONS
z General purpose switching and amplification application.
ORDERING INFORMATION
Type No.
Marking
BC846W
BC847W
BC848W
1A/1B
1E/1F/1G
1Js/1Ks/1Ls
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
Collector-Base Voltage
Collector-Emitter Voltage
BC846W
80
BC847W 50
BC848W 30
BC846W
65
BC847W
45
BC848W
30
Emitter-Base Voltage
BC846W,BC847W 6
BC848W
5
I_C
Collector Current -Continuous
100
Units
V
V
V
mA
P_C
T_j,T_stg
Collector Dissipation
Junction and Storage Temperature
200
mW
-65~150
℃
Document number: BL/SSSTF045
Rev.A
www.galaxycn.com
1