BC817W Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN general purpose transistor

Production specification
NPN general purpose transistor
FEATURES
z High collector current.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Complementary types:BC807W,BC808W.
APPLICATIONS
z General purpose switching and amplification application.
ORDERING INFORMATION
Type No.
Marking
BC817-16W
6A
BC817-25W
6B
BC817-40W
6C
BC818-16W
6E
BC818-25W
6F
BC818-40W
6G
BC817W/BC818W
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
BC817W 50
BC818W 30
V_CEO
Collector-Emitter Voltage
BC817W 45
BC818W 25
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
500
I_CM
Peak Collecter Current
1
I_B
Base Current
100
I_BM
Peak Base Current
200
P_tot
Total Power Dissipation
250
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
A
mA
mA
mW
℃
F076
Rev.B
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