BC807W_14 Datasheet, PDF (1/5 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor

Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z For general AF applications.
z High collector current.
z High current gain.
z Low collector-emitter saturation voltage.
z Complements the BC817W.
Pb
Lead-free
BC807W
APPLICATIONS
z For general purpose amplification and switching.
ORDERING INFORMATION
Type No.
Marking
BC807-16W/25W/40W
5A/5B/5C
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Peak Collector Current
Base Current
Peak Base Ccurrent
Collector Dissipation
Junction and Storage Temperature
-50
-45
-5
-500
-1
-0.1
-0.2
250
-65 to +150
Units
V
V
V
mA
A
A
A
mW
℃
F044
Rev.A
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