BAV74 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

BL Galaxy Electrical
Dual surface mount switching diode
FEATURES
z For high-speed switching appilication.
z Common cathode.
Pb
Lead-free
APPLICATIONS
z Small signal switching
Production specification
BAV74
ORDERING INFORMATION
Type No.
Marking
BAV74
JA
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Diode reverse voltage
V_R
Peak Reverse Voltage
V_RM
Forward Current
I_F
Surge forward current, t=1μs
I_FS
Total Power Dissipation T_s=35℃
P_tot
Junction temperature
T_j
Storage temperature range
T_stg
50
V
50
V
200
mA
4.5
A
250
mW
150
℃
-65-+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Symbol
V_(BR)R
I_R
V_F
Test conditions
I_R= 100μA
V_R=50V
V_R=50V T_A=150℃
I_F=100mA
MIN MAX UNIT
50
V
0.1
μA
100
1
V
Diode capacitance
Reverse recovery time
C_D
V_R=0V f=1MHz
t _rr
I_F=I_R=10mA
I_R=1mA R_L=100Ω
2.0
pF
4
nS
Document number: BL/SSSDC036
Rev.A
www.galaxycn.com
1