BAV70T Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

High-speed double Diode
FEATURES
z Very small plastic SMD package.
Pb
z High switching speed:max.4ns. Lead-free
z Continuous reverse voltage:max.75V.
z Repetitive peak reverse voltage:max.85V.
z Repetitive peak forward current:max.500 mA.
Production specification
BAV70T
APPLICATIONS
z High-speed switching in e.g. surface mounted circuits.
ORDERING INFORMATION
Type No.
Marking
BAV70T
JJ
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
Units
V_RRM
V_R
I_FM
I_FRM
I_FSM
P_tot
T_j,T_stg
Peak repetitive reverse voltage
85
V
Continuous reverse voltage
75
V
Forward continuous current(MAX.)
single diode loaded 150
mA
Both diodes loaded 75
Repetitive peak forward current
500
mA
Non-repetitive peak forward surge current
@t=1.0μs
@t=1.0ms
@t=1.0s
4
A
1
0.5
Total power dissipation T_S=90℃;one diode loaded
170
mW
Junction and Storage Temperature
-65 to +150 ℃
H023
Rev.A
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