BAT60B_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Production specification
Schottky Barrier Diode
FEATURES
z Low voltage,Low inductance
z High current rectifier schottky diode
z For power supply
z For detection and step-up-conversion
Pb
Lead-free
BAT60B
APPLICATIONS
z Schottky barrier detector
ORDERING INFORMATION
Type No.
Marking
BAT60B
W5•
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC Reverse Voltage
V_RM
10
V
V_R
10
V
Average Rectified Output Current
I_O
3
A
Forward Surge Current
I_FSM
5
A
Total Power Dissipation
P_tot
350
mW
Junction temperature
Storage temperature range
T_j
150
℃
T_stg
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V_F
I_R
C_T
Conditions
I_F=10mA
I_F=100mA
I_F=500mA
I_F=1000mA
V_R=5v
V_R=8v
V_R=5v,f=1MHz
Min. Typ. Max. Unit
0.2
0.24 0.3
V
0.26 0.32 0.38 V
0.32 0.4
0.5
V
0.36 0.48 0.6
V
5
15
μA
10
25
12
25
30
pF
B016
Rev.A
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