BAT42 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODES

BL GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODES
BAT42- - - BAT43
REVERSE VOLTAGE : 30 V
CURRENT: 0.2 A
FEATURES
These diodes feature very low turn-on voltage and
fast guard ring against excessive voltage,such as
electrostatic discharges
200 m W power dissipation
These diodes are also available in the SOD-123
case with the type designations BAT42W to
BAT43W and in designations LL42 to LL43
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at ₂₅ am bient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
Repetitive peak reverse voltage
V_RRM
Reverse breakdown voltage I_R=100µ A (pulsed) _{V (BR)}
Average forw ard rectified current
BAT42
half w ave rectification w ith resist.load
I_AV
@^T_A⁼25 ^{and f 50Hz}
Forw ard surge current @ t<10ms
I_FSM
Pow er dissipation
@ T_A=₆₅
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 4 mm f rom case are kept at ambient temperature.
30
30
200.0
4
200¹⁾
125
-55 --- +150
ELECTRICAL CHARACTERISTICS
MIN
TYP
Forw ard voltage @I_F=200 mA BAT42
-
-
BAT43
-
-
I_F=10 mA
I_F=50 mA
BAT42
BAT43
V_F
-
-
-
-
I_F=2 mA _BAT43
-
-
I_F=15 mA BAT43
-
-
Capacitance @ V_R=1V_,f=1MHZ
C_tot
-
7
Reverse breakdown voltage
VR=25 V
I_R
-
-
V_R=25 V,T_J=100
-
-
Reverse recovery time
f rom I_F=10mA to I_R=10mA
t_rr
-
-
I _rr=1mA, R_L=100Ω.
Thermal resistance junction to ambient
R_θJA
Rectification efficiency (NOTE2)
η_v
0.80
-
1)Valid prov ided that leads at a distance of 4 mm f rom case are kept at ambient temperature.
2)R_L=15K ^CL^{=300PF,f=45MHZ,V}RF^=2V
C
Document Number 0265017
BLGALAXY ELECTRICAL
BAT43
UNITS
V
V
mA
A
mW
MAX
1
1
0.4
0.65
0.33
0.45
-
0.5
100
U N ITS
V
pF
µA
5
ns
300¹⁾
-
K/W
-
www.galaxycn.com
1.