BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

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SMALL SIGNAL SCHOTTKY DIODES
BAS85
VOLTAGE RANGE: 30 V
CURRENT: 0.2 A
FEATURES
For general purpose applications
This diode features very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against exces sive
voltage, such as electrostatic discharges
MECHANICAL DATA
Case:JEDEC mini-melf,glass case
Polarity: Color band denotes cathode end
Weight: Approx.0.031 grams
Mini-melf
SOLDERABLE ENDS
1st BAND
2nd BAND
D2
0.022(0.559)
0.016(0.406)
0.145(3.683)
0.131(3.327)
D1=
0.066
0. 060
(1.676)
( 1. 524 )
0.022(0.559)
0.016(0.406)
D2=D1
0
0.008(0.20)
ABSOLUTE RATINGS
Symbols
Continuous reverse voltage
V_R
Forw ard continuous current @ TA=25
I_F
Peak forw ard current
@ T_A=25
I_FM
Surge forw ard current
@ t_p<1s,TA=25
I_FSM
Pow er dissipation
@ TA=65
P_tot
Junction temperature
T_J
Ambient operating temperature range
T_A
Storage temperature range
T_STG
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Min.
Reverse breakdow n voltage
V_R
30.0
Forw ard voltage
Pulse test tp<300 s, <2%
@ I_F=0.1mA
@ I_F=1mA
V_F
@ IF=10mA
@ I_F=30mA
@ IF=100mA
Leakage current VR=25V
I_R
Junction capacitance at VR=1V,f=1MHz
C_J
Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA
t_rr
Thermal resistance junction to ambient
R_θJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Value
30.0
200 ¹⁾
300 ¹⁾
600 ¹⁾
200 ¹⁾
125
c-55 ---+ 125
c-55 ---+ 150
UNITS
V
mA
mA
mA
mW
Typ.
0.5
Max.
UNITS
V
0.24
V
0.32
V
0.4
V
V
0.8
V
2.0
A
10
pF
5
ns
430¹⁾
/W
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Document Number 0265016
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