BA157Z_15 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

BL GALAXY ELECTRICAL
FAST RECOVERY RECT IFIERS
BA157(Z) - - - BA159(Z)
VOLTAGE RANGE: 400 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
BA157
Maximum recurrent peak reverse voltage
V_RRM
400
Maximum RMS voltage
V _{R MS}
280
Maximum DC blocking voltage
V_DC
400
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_{F (AV)}
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
I_{F S M}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_{θ J A}
Operating junction temperature range
T_J
Storage temperature range
T_STG
N OTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Therm al resistance f rom junction to ambient.
BA158
BA159D
600
800
420
560
600
800
1.0
BA159
1000
700
1000
UNITS
V
V
V
A
30.0
1.3
5.0
100.0
300
12
55
- 55---- +125
- 55---- + 150
A
V
A
ns
pF
/W
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Document Number 1561135
BLGALAXY ELECTRICAL
1.