4A1 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

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PLASTIC SILICON RECTIFIER
4A1 - - - 4A10
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,50 Hz,res istive or inductive load. For capacitive load,derate by 20%.
4A1
Maximum recurrent peak reverse voltage V_RRM 100
Maximum RMS voltage
V_RMS
70
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified current
9.5mm lead length, @T_A=75
I_F(AV)
Peak forward surge current
10ms single half-sine-wave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forward voltage
@ 4.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R _JA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
4A2
200
140
200
4A4 4A6
400 600
280 420
400 600
4.0
4A8 4A10
800 1000
560
700
800 1000
UNITS
V
V
V
A
250.0
A
0.95
10.0
100.0
50
20
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
www.galaxycn.com
Document Number 0260010
BLGALAXY ELECTRICAL
1.