2SD999 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

NPN Silicon Epitaxial Transistor
FEATURES
z Low Collector Saturation Voltage:
V_CE(sat)<0.4V( I_C=1.0A,I_B =100mA)
z Excellent DC Current Gain Linearity:
h_FE=140Typ.( V_CE=1.0V, I_C=1.0A)
z Complements to PNP type 2SB798
Pb
Lead-free
Production specification
2SD999
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SD999
CM/CL/CK
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
30
V
25
V
5.0
V
1.0
A
2.0
W
-55 to +150
℃
-55 to +150
℃
E117
Rev.B
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