2SD596_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Pb
z Micro package
Lead-free
z Complementary to 2SB624 PNP Transistor
z High DC current gain h_FE:200TYP.(V_CE=1.0V,I_C=100mA)
2SD596
APPLICATIONS
z Audio frequency general purpose amplifier applications
ORDERING INFORMATION
Type No.
Marking
2SD596
DV1/DV2/DV3/DV4/DV5
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
700
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
C024
Rev.A
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