2SD1766 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 2A)

Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Pb
z Low saturation voltage:V_CE(sat)=0.5V(Typ.) _Lead-free
z P_C=0.5W(Mounted on ceramic substrate)
z Small flat package.
z Complementary pair with 2SB1188.
2SD1766
APPLICATIONS
z Power amplifier application.
ORDERING INFORMATION
Type No.
Marking
2SD1766
DBP/DBQ/DBR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
Units
V
V_CEO
Collector-Emitter Voltage
32
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
2
A
P_C
Collector Dissipation
500
mW
T_j,T_stg
Junction and Storage Temperature
-55 to +150
℃
E018
Rev.A
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