2SD1664 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 1A)

Production specification
Medium Power Transistor(32V,1A)
FEATURES
z Low saturation voltage:V_CE(sat)=0.15V(typ.)
(I_C/i_B=500mA/50mA)
z P_C=0.5W
z Complement the 2SB1132.
Pb
Lead-free
2SD1664
APPLICATIONS
z NPN silicon transistor.
ORDERING INFORMATION
Type No.
Marking
2SD1664
DAP/DAQ/DAR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
32
Units
V
V
V_EBO
I_C
I_C
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -pulse
5
V
1
A
2
A
P_C
T_j,T_stg
Collector Dissipation
Junction and Storage Temperature
500
mW
-55 to +150
℃
E011
Rev.A
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