2SC3356W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain: NF=1.1dB TYP,
Pb
G_a=11dB TYP. @V_CE=10V,I_C=7mA,f=1.0GHz Lead-free
z High power gain:MAG=13dB TYP.
@V_CE=10V.I_C=20mA,f=1.0GHz
2SC3356W
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC3356W
R23/R24/R25
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
20
V_CEO
Collector-Emitter Voltage
12
V_EBO
Emitter-Base Voltage
3
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF001
Rev.A
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