2SC3356 Datasheet, PDF (1/4 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain.
NF=1.1dB TYP.,G_a=11dB TYP.
@V_CE=10V,I_C=7mA, f=1.0GHz
z High power gain. MAG=13dB TYP.
@V_CE=10V,I_C=20mA,f=1.0GHz.
Pb
Lead-free
2SC3356
APPLICATIONS
z Designed for low noise amplifier at VHF,UHF and CATV band.
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SC3356
R23/R24/R25
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
20
V_CEO
Collector-Emitter Voltage
12
V_EBO
Emitter-Base Voltage
3
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
mW
℃
C142
Rev.A
www.gmicroelec.com
1