2SC3125 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE RF AMPLIFIER APPLICATIONS)

Silicon Epitaxial Planar Transistor
FEATURES
z Good Linearity of f_T.
Pb
Lead-free
Production specification
2SC3125
ORDERING INFORMATION
Type No.
Marking
2SC3125
HH
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
4
I_C
Collector Current -Continuous
50
I_B
Base Current
25
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55 to +125
Units
V
V
V
mA
mA
mW
℃
C185
Rev.A
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