2SC2883 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS)

NPN Silicon Epitaxial Planar Transistor
FEATURES
z Suitable for output stage of 3 watts
amplifier.
z Small flat package.
z P_C=1.0 to 2.0W.
z Complements the 2SA1203.
Pb
Lead-free
Production specification
2SC2883
ORDERING INFORMATION
Type No.
Marking
2SC2883
GO/GY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
30
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
1.5
I_B
Base Current
0.3
P_C
Collector Dissipation
500
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
mW
℃
E051
Rev.A
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