2SC2881 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High voltage:V_CEO=120V
z High transition frequency;f_T=120MHz.
z P_C=500mW.
z Complements the 2SA1201.
Pb
Lead-free
2SC2881
APPLICATIONS
z Power and voltage amplifier application.
ORDERING INFORMATION
Type No.
Marking
2SC2881
CO1/CY1
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base current
Collector Dissipation
Junction and Storage Temperature
120
120
5
0.8
0.16
500
-55 to +150
Units
V
V
V
A
A
mW
℃
E026
Rev.A
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