2SC2873 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Silicon NPN Epitaxial Transistor
FEATURES
z Small flat package.
z Low saturation voltage V_CE(sat)=-0.5V
z High speed switching time
z Complementary to 2SA1213
Pb
Lead-free
Production specification
2SC2873
APPLICATIONS
z Power amplifier
z Power Switching
ORDERING INFORMATION
Type No.
Marking
2SC2873
MO/MY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
50
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
2
I_B
Base Current
0.4
P_C
Collector Power Dissipation
500
P_C
Collector Power Dissipation(Note 1)
1000
T_j,T_stg
Junction and Storage Temperature
Note 1:Mounted on a ceramic substrate(250mm²*0.8t)
-55 to +150
Units
V
V
V
A
A
mW
mW
℃
E050
Rev.A
www.gmicroelec.com
1