2SC2859_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation：P_C=150mW.
z Excellent h_FE linearity:h_FE(2)=25
(V_CE=6V,I_C=400mA).
z Complementary to 2SA1182.
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
Production specification
2SC2859
SOT-23
ORDERING INFORMATION
Type No.
2SC2859
Marking
WO/WY/WG
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
35
V
30
V
5
V
500
mA
150
mW
-55 to +125
℃
C100
Rev.A
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