2SC2859 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation：P_C=150mW.
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
Production specification
2SC2859
ORDERING INFORMATION
Type No.
Marking
2SC2859
WO/WY/WG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
35
Units
V
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
30
V
5
V
500
mA
150
mW
-55~125
℃
Document number: BL/SSSTC100
Rev.A
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