2SC2715 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications.
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
35
V_CEO
Collector-Emitter Voltage
30
V_EBO
Emitter-Base Voltage
4
I_C
Collector Current -Continuous
50
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC099
Rev.A
www.galaxycn.com
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