2SC2712_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise：NF=1dB (Typ.),10 dB(Max)
z Complementary to 2SA1162
Pb
Lead-free
z High voltage and high current
z Excellent h_FE linearity
2SC2712
APPLICATIONS
z Audio frequency general purpose amplifier applications
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SC2712
LO/LY/LG/LL
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
150
I_B
Base current
30
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55 to +125
Units
V
V
V
mA
mA
mW
℃
C021
Rev.A
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