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| 2SC2411_0712 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation: PCM=200mW
z High ICM(MAX.),I CM(MAX.)=0.5mA.
z Low VCE(sat).
z Complements the 2SA1036.
Pb
Lead-free
2SC2411
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor
ORDERING INFORMATION
Type No.
Marking
2SC2411
CP/CQ/CR
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
40
VCEO
Collector-Emitter Voltage
32
VEBO
Emitter-Base Voltage
5
IC
Collector Current -Continuous
500
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
â
Document number: BL/SSSTC097
Rev.A
www.galaxycn.com
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