2SC1815 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High voltage and high current
V_CEO=50V(Min),I_C=150mA(Max).
Pb
Lead-free
z Excellent h_FE linearity : h_FE(2)=100 (Typ) at V_CE=6V,I_C=150mA
h_FE(I_C=0.1mA) / h_FE(I_C=2mA=0.95(Typ))
z Low noise.
z Complementary to 2SA1015.
2SC1815
APPLICATIONS
z Audio frequency general purpose amplifier applications.
ORDERING INFORMATION
Type No.
Marking
2SC1815
HF
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
150
I_B
Base Current
50
P_C
Collector Dissipation
400
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
C019
Rev.A
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