2SC1623_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:h_FE=200TYP
(V_CE=6.0V,I_C=1.0mA).
z High Voltage:V_CEO=50V.
Pb
Lead-free
2SC1623
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
z Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
Marking
2SC1623
L4/L5/L6/L7
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
60
50
5
100
200
-55 to +150
Units
V
V
V
mA
mW
℃
C018
Rev.A
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