2SC1623W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain: h_FE=200TYP.
z High voltage: V_CEO=50V.
z Power dissipation.(P_C=200mW)
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier.
Production specification
2SC1623W
ORDERING INFORMATION
Type No.
Marking
2SC1623W
L4/L5/L6/L7
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF035
Rev.A
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