2SB709A_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High forward current transfer ratio h_FE.
z Mini type package, allowing downsizing
Pb
Lead-free
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
2SB709A
APPLICATIONS
z For general amplification complementary to 2SD601A.
ORDERING INFORMATION
Type No.
Marking
2SB709A
BQ1/BR1/BS1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_CP
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak collector Current
Collector Current
Collector Dissipation
Junction and Storage Temperature
-45
-45
-7
-200
-100
200
-55 to +150
Units
V
V
V
mA
mA
mW
℃
C015
Rev.A
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