2SB709A_0712 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High forward current transfer ratio h_FE.
z Mini type package, allowing downsizing
Pb
Lead-free
of the equipment and automatic insertion
through the tape packing and the magazine
packing.
2SB709A
APPLICATIONS
z For general amplification complementary to 2SD601A
ORDERING INFORMATION
Type No.
Marking
2SB709A
BQ1,BR1,BS1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-45
V_CEO
Collector-Emitter Voltage
-45
V_EBO
Emitter-Base Voltage
-7
I_CP
Peak collector Current
-200
I_C
Collector Current
-100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mA
mW
℃
Document number: BL/SSSTC015
Rev.A
www.galaxycn.com
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