2SB624_0712 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain.h_FE: 200TYP
(V_CE=-1.0V,I_C=-100mA)
z Complimentary to the 2SD596.
Pb
Lead-free
2SB624
APPLICATIONS
z Audio frequency amplifier.
z Switching appilication.
ORDERING INFORMATION
Type No.
Marking
2SB624
BV1/BV2/BV3/BV4/BV5
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-30
V_CEO
Collector-Emitter Voltage
-25
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-700
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC014
Rev.A
www.galaxycn.com
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