2SB1386 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z Low V_CE(sat)=-0.35V(Typ.)
(I_C/I_B=-4A/-0.1A).
Pb
Lead-free
z Excellent DC current gain characteristics.
z Complementary: 2SD2098.
2SB1386
APPLICATIONS
z Low frequency transistor.
ORDERING INFORMATION
Type No.
Marking
2SB1386
BHP/BHQ/BHR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-30
V_CEO
Collector-Emitter Voltage
-20
V_EBO
I_C
P_C
RθJA
Emitter-Base Voltage
Collector Current
Collector Dissipation
-6
DC -5
Pulse _-10
500
Thermal Resistance,,Junction-to- Ambient ₃₀₀
RθJC
Thermal Resistance,Junction -to-Case
80
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
mW
℃/W
℃/W
℃
E024
Rev.A
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