2SB1260 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor

Power Transistor(-80V,-1A)
FEATURES
z High breakdown voltage and
high current.
BV_CEO=-80V,I_C=-1A
z Good h_FEVLinearity.
z Low V_CE(sat).
z Complements the 2SD1898.
Pb
Lead-free
APPLICATIONS
z Epitaxial planar type PNP silicon transistor
Production specification
2SB1260
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SB1260
ZL
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_c
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –DC
-Pulse
Collector power Dissipation
-80
V
-80
V
-5
V
-1
A
-2
0.5
W
2 *1
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-55 to +150
℃
*1: When mountef on a 40*40*0.7mm ceramic board.
E045
Rev.A
www.gmicroelec.com
1