2SB1218AW Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z High forward current transfer ratio h_FE
z Excellent H_FE Linearity.
z Complements the 2SD1819A.
Pb
Lead-free
APPLICATIONS
z For general purpose amplification.
Production specification
2SB1218AW
ORDERING INFORMATION
Type No.
Marking
2SB1218AW
BQ1/BR1/BS1
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-45
V_CEO
Collector-Emitter Voltage
-45
V_EBO
Emitter-Base Voltage
-7
I_C
Collector Current -Continuous
-200
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF034
Rev.A
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