2SB1197_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Small surface mounting type.
z Corredtor peak current(Max.=1000mA).
Pb
Lead-free
z Suitable for high packing density.
z Low voltage(Max.=40v).
z High saturation current capability.
z Voltage controlled small signal switch.
APPLICATIONS
z Telephone and professional communication equipment.
z Other switching appilications.
ORDERING INFORMATION
Type No.
Marking
2SB1197
AHP/AHQ/AHR
2SB1197
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_C
R_θJA
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Collector Dissipation
Thermal resistance,Junction-to-Ambient
Junction and Storage Temperature
-40
-32
-5
-800
-1
-80
200
625
-55 to +150
Units
V
V
V
mA
A
mA
mW
℃/W
℃
C016
Rev.A
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