2SB1197_0712 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Small surface mounting type.
z Corredtor peak current(Max.=1000mA)
Pb
Lead-free
z Suitable for high packing density.
z Low voltage(Max.=40v)
z High saturation current capability.
z Voltage controlled small signal switch.
APPLICATIONS
z Telephone and professional communication equipment.
z Other switching appilications.
ORDERING INFORMATION
Type No.
Marking
2SB1197
AHP,AHQ,AHR
2SB1197
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-40
V_CEO
Collector-Emitter Voltage
-32
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current DC
-800
I_CM
Peak Collector Current
-1
I_BM
Peak Base Current
-80
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-65~150
Units
V
V
V
mA
A
mA
mW
℃
Document number: BL/SSSTC016
Rev.A
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