2SB1189 Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (-80V, -0.7A)

Medium power transistor(-80V,-0.7A)
FEATURES
z High breakdown voltage,BV_CEO=-80V,
And high current,I_C=-0.7A.
z Complementary the 2SD1767.
Pb
Lead-free
Production specification
2SB1189
ORDERING INFORMATION
Type No.
Marking
2SB1189
BDP/BDQ/BDR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current
-0.7
A
P_C
Collector power dissipation
500
mW
T_j,T_stg
Junction and Storage Temperature
-55 to +150
℃
E044
Rev.A
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