2SB1132 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor

Production specification
PNP General Purpose Amplifier
FEATURES
z Low V_CE(SAT)=-0.2V(Typ.)
(I_C/I_B=-500mA/-50mA).
z Complementary NPN type available
2SD1664.
Pb
Lead-free
2SB1132
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching.
ORDERING INFORMATION
Type No.
Marking
2SB1132
BAP/BAQ/BAR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
-40
V
-32
V
V_EBO
I_C
P_D
R_θJA
T_j,T_stg
Emitter-Base Voltage
Collector Current –DC
-Pulse
Total Device Dissipation
Thermal resistance,Junction-to-Ambient
Junction and Storage Temperature
-5
-1
-2
500
250
-55 to+150
V
A
mW
℃/W
℃
E028
Rev.A
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