2SA812 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Commplementary to 2SC1623.
z High DC current gain:h_FE=200typ.
(V_CE=-6.0V,I_C=-1.0mA)
z High Voltage: V_CEO=-50V
Pb
Lead-free
2SA812
APPLICATIONS
z Audio frequency, general purpose amplifier
ORDERING INFORMATION
Type No.
Marking
2SA812
M4/M5/M6/M7
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-60
V_CEO
Collector-Emitter Voltage
-50
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-100
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTC010
Rev.A
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