2SA1797 Datasheet, PDF (1/5 Pages) Rohm – Power Transistor (-50V, -3A)

Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z Low saturation voltage V_CE(sat)=-0.35V(Max.)
(I_C/I_B=-1A/-0.5A).
z Excellent DC current gain characteristics.
z Complements the 2SA1797 and 2SC4672.
Pb
Lead-free
2SA1797
APPLICATIONS
z Low frequency transistor.
ORDERING INFORMATION
Type No.
Marking
2SA1797
AGP/AGQ
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-50
V_CEO
Collector-Emitter Voltage
-50
V_EBO
I_C
P_C
Emitter-Base Voltage
Collector Current
Collector Dissipation
-6
DC -2
Pulse _-5
500
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
mW
℃
E027
Rev.A
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