2SA1611W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor

BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z High voltage V_CEO=-50V.
z Excellent H_FE Linearity.
z High DC current gain : h_FE=200 typ.
z Complementary to 2SC4177.
Pb
Lead-free
Production specification
2SA1611W
APPLICATIONS
z Audio frequency general purpose amplifier applications.
ORDERING INFORMATION
Type No.
Marking
2SA1611W
M4/M5/M6/M7
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-60
V_CEO
Collector-Emitter Voltage
-50
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-100
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF033
Rev.A
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