2SA1235A_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Small collector to emitter saturation voltage
V_CE(sat)=-0.3V max(@I_C=-100mA,I_B=-10mA).
Pb
Lead-free
z Excellent lineary DC forward current gain.
z Super mini package for easy mounting.
2SA1235A
APPLICATIONS
z PNP epitaxial type transistor designed for low frequency.
z Voltage amplify application.
ORDERING INFORMATION
Type No.
Marking
2SA1235A
ME/MF/MG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j,T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-50
-50
-6
-200
150
-55 to +125
Units
V
V
V
mA
mW
℃
C094
Rev.A
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