2SA1213 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Silicon Planar Epitaxial Transistor
FEATURES
z Low saturation voltage
z High speed switching time
Pb
Lead-free
z Small flat package
z P_C=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2873
Production specification
2SA1213
ORDERING INFORMATION
Type No.
Marking
2SA1213
NO/NY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
P_C
Collector Dissipation
T_j,T_stg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm²*0.8t)
-50
-50
-5
-2
-0.4
500
1000(Note1)
-55 to +150
Units
V
V
V
A
A
mW
℃
E040
Rev.A
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