2SA1204 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Silicon Planar Epitaxial Transistor
FEATURES
z Suitable for output stage of1 watts
Amplifier
Pb
Lead-free
z Suitable flat package
z High DC current gain
z P_C=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2884
Production specification
2SA1204
ORDERING INFORMATION
Type No.
Marking
2SA1204
RO/RY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-35
V_CEO
Collector-Emitter Voltage
-30
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current
-800
I_B
Base Current
P_C
Collector Dissipation
T_j,T_stg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm²*0.8t)
-160
500
1000(Note1)
-55 to +150
Units
V
V
V
mA
mA
mW
℃
E039
Rev.A
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